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Description
Description
| Capacity | 256GB, 512GB, 1TB |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen3x4 |
| Speed | · 256GB sequential read up to 3000MB/s read, sequential write up to 1300MB/s IOPS: up to 92/240K· 512GB sequential read up to 3300MB/s read, sequential write up to 2400MB/s IOPS: up to 200/256K· 1TB sequential read up to 3300MB/s read, sequential write up to 3000MB/s IOPS: up to 300/256K |
| NAND flash | 3D TLC |
| Operating Temperature | 0° C to 70° C (32°F to 158°F) |
| Storage Temperature | -40° C to 85° C (-40°F to 185°F) |
| Shock Resistant | 1500G, duration 0.5ms, Half Sine Wave |
| Vibration Resistant | 10~2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z) |
| TBW | 256GB: 125TB, 512GB: 250TB, 1TB: 500TB |
| DWPD | 0.44 |
| MTBF | 1,500,000 Hours |
| Dimension (L x W x H) | 80 mm x 22 mm x 2.25 mm / 3.15” x 0.87” x 0.09” |
| Weight | 9 g |
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